Intel plans 3D NAND flash next year for ‘as much storage as you want’
Intel plans to ship 3D NAND flash chips next year that will allow it to cram more bits into solid-state storage.
Its 3D NAND will have twice the density of competing products on the market now, Intel claims. Samsung, a key rival, is already on its second generation of SSDs built with 3D technology.
3D NAND has multiple layers of transistors stacked on top of each other in a cube. Intel’s chips will have 32 layers. Samsung is shipping SSDs made with 32-layer flash, but Intel says its products will hold twice as many bits: 256 billion bits on a single die using MLC (multilevel cell), the most common form of flash.
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