Intel plans to ship 3D NAND flash chips next year that will allow it to cram more bits into solid-state storage.
Its 3D NAND will have twice the density of competing products on the market now, Intel claims. Samsung, a key rival, is already on its second generation of SSDs built with 3D technology.
3D NAND has multiple layers of transistors stacked on top of each other in a cube. Intel’s chips will have 32 layers. Samsung is shipping SSDs made with 32-layer flash, but Intel says its products will hold twice as many bits: 256 billion bits on a single die using MLC (multilevel cell), the most common form of flash.