Toshiba today announced the development of the first 48-layer, three-dimensional flash memory.

Based on a vertical stacking technology that Toshiba calls BiCS (Bit Cost Scaling), the new flash memory stores two bits of data per transistor, meaning it’s a multi-level cell (MLC) flash chip. It can store 128Gbits (16GB) per chip. Sample shipments of products using the new process technology began Thursday.

Toshiba first announced its efforts to create 3D NAND flash chips in a partnership agreement with SanDisk last year.

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